The Bipolar Junction Transistor (BJT) when used for power switching applications operates as an IGBT. When it is conducting (BJT operating in the saturated region) a forward voltage Vf is developed between collector and emitter (in the range of 1 V). Therefore the IGBT block can be used to model the BJT device.
The IGBT block does not simulate the gate current controlling the BJT or IGBT. The switch is controlled by a simulink signal (1/0). The DC motor uses the preset model (5 HP 24V 1750 rpm). It simulates a fan type load (where Load torque is proportional to square of speed). The armature mean voltage can be varied from 0 to 240 V when the duty cycle (specified in the Pulse Generator block) is varied from 0 to 100%.
The H bridge consists of four BJT/Diode pairs (BJT simulated by IGBT models). Two transistors are switched simultaneously: Q1 and Q4 or Q2 and Q3. When Q1 and Q4 are fired, a positive voltage is applied to the motor and diodes D2-D3 operate as free-wheeling diodes when Q1 and Q3 are switched off. When Q2 and Q3 are fired, a negative voltage is applied to the motor and diodes D1-D4 operate as free-wheeling diodes when Q2 and Q3 are switched off.
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